lattice-strain theory 点阵胁变理论
strain free lattice 无应变点阵
strain lattice 应变晶格 ; 晶格应变
lattice-misfit strain 晶格失配应变
lattice scattering strain 晶格应变
strain n free lattice 无应变点阵
The lattice strain and band repulsion affecting band gap is investigated.
分析了晶格畸变和能带间排斥效应对带隙的影响。
In addition, theoretical analysis indicates that the reduction in the lattice thermal conductivity with vacancy defects can be explained by the enhanced point-defect scattering due to lattice strain.
同时理论方法还表明，空位缺陷对薄膜热导率的巨大影响归因于晶格应力的存在使点缺陷也发生散射作用的结果。
Strained silicon is a fundamental component of all recent microprocessors. The reason for its success is that local strain-induced deformation in the crystal lattice improves processor performance.
“变形”硅是所有最新的处理器的基本组成部分，原因是：晶格里应变诱发的形变提升了处理器的性能。
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